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vishay siliconix sip4282 document number: 65740 s10-0671-rev. e, 29-mar-10 www.vishay.com 1 1.2 a slew rate controlled load switch in ppak sc75-6, and tdfn4 1.2 mm x 1.6 mm features ? 1.8 v to 5.5 v input voltage range for sip4282 ? 1.5 v to 5.5 v input voltage range for sip4282a ? very low r ds(on) , typically 105 m at 5 v and 175 m at 3 v ? slew rate controlled turn-on time options: 100 s, and 1 ms ? fast shutdown load discharge ? low quiescent curr ent, 4 a for sip4282 ? low quiescent current, 1 a for sip4282a ? low shutdown current < 1 a ? uvlo of 1.4 v for sip4282 ? powerpak sc-75 1.6 mm x 1.6 mm and tdfn4 1.2 mm x 1.6 mm packages ? compliant to rohs directive 2002/95/ec applications ? cellular telephones ? digital still cameras ? personal digital assistants (pda) ? hot swap supplies ? notebook computers ? personal communication devices ? portable instruments description the sip4282 series is a slew rate controlled high side switch. the switch is of a low on resistance p-channel mosfet that supports continuous current up to 1.2 a. the sip4282 series operates with an input voltage from 1.8 v to 5.5 v. it offers under voltage lock out that turns the switch off when an input under voltage condition exists. the "a" option without uvlo extends the minimum operation voltage from 1.8 v down to 1.5 v. the sip4282 is available in two different versions of slew rates, 100 s and 1 ms. the sip4282 series integrates load discharge circuit to ensure the discharge of capacitive load when the switch is disabled. the sip4282 features low input logic level to interface with low control voltage from microprocessors. this device has a very low operating current (typically 2.5 a for sip4282 and 50 pa for sip4282a). the sip4282 is available in lead (pb)-free package options including 6 pin ppak sc75-6, and 4 pin tdfn4 1.2 mm x 1.6 mm dfn4 packages. the operation temperature range is specified from - 40 c to + 85 c. the sip4282 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications. typical application circuit figure 1 - sip4282 typical application circuit sip42 8 2 i n v out out v i n g n d g n d g n d o n /off o n /off c 1 f i n c 0.1 f out
www.vishay.com 2 document number: 65740 s10-0671-rev. e, 29-mar-10 vishay siliconix sip4282 notes: xxx = lot code notes: a. device mounted with all leads and power pad soldered or welded to pc board. b. derate 11.1 mw/c above t a = 70 c. c. derate 5.9 mw/c above t a = 70 c, see pcb layout. stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating/conditions for extended periods may affect device reliability. ordering information temperature range package slew rate (typ.) under voltage lockout marking part number - 40 c to 85 c ppak sc75-6 1 ms no ldxxx SIP4282ADVP2-T1GE3 100 s no lexxx sip4282advp3-t1ge3 100 s yes lfxxx sip4282dvp3-t1ge3 tdfn4 1.2 x 1.6 1 ms no aax sip4282adnp2-t1ge4 100 s no abx sip4282adnp3-t1ge4 100 s yes acx sip4282dnp3-t1ge4 absolute maximum ratings parameter limit unit supply input voltage (v in ) - 0.3 to 6 v enable input voltage (v on/off ) - 0.3 to 6 output voltage (v out ) - 0.3 to v in + 0.3 maximum continuous switch current (i max ) 1.4 a maximum pulsed current (i dm ) v in v in 2.5 v 3 v in < 2.5 v 1.6 esd rating (hbm) 4000 v junction temperature (t j ) - 40 to 125 c thermal resistance ( ja ) a 6 pin ppak sc75 b 90 c/w 4 pin tdfn4 1.2 mm x 1.6 mm c 170 power dissipation (p d ) a 6 pin ppak sc75 b 610 mw 4 pin tdfn4 1.2 mm x 1.6 mm c 324 recommended operating range parameter limit unit input voltage range (v in ) for sip4282 version 1.8 to 5.5 v input voltage range (v in ) for sip4282a version 1.5 to 5.5 v operating temperature range - 40 to 85 c
document number: 65740 s10-0671-rev. e, 29-mar-10 www.vishay.com 3 vishay siliconix sip4282 notes: a) the algebriac convention whereby t he most negative value is a minimu m and the most positive a maximum. b) typical values are for design aid only, not guaranteed nor subject to production testing c) part requires minimum start-up of v in 2.0 v to ensure operation down to 1.8 v. d) for v in outside this range consult ty pical on/off threshold curve. specifications parameter symbol test conditions unless specified v in = 5.0, t a = - 40 c to 85 c (typical values are at t a = 25 c) limits - 40 c to 85 c unit min. a typ. b max. a operating voltage c v in for sip4282xxx 1.8 - 5.5 v operating voltage for sip4282axxx 1.5 - 5.5 under voltage voltage v uvlo for sip4282xxx, v in falling 1.0 1.4 1.8 under voltage lockout hysteresis v uvlo(hyh) for sip4282xxx - 250 - mv quiescent current i q for sip4282xxx, on/off = active - 2.5 4 a for sip4282axxx, on/off = active - 0.00005 1 on-resistance r ds(on) v in = 5 v, i l = 500 ma, t a = 25 c - 105 230 m v in = 4.2 v, i l = 500 ma, t a = 25 c - 110 250 v in = 3 v, i l = 500 ma, t a = 25 c - 135 290 v in = 1.8 v, i l = 500 ma, t a = 25 c - 230 480 for sip4282axxx, v in = 1.5 v, i l = 500 ma, t a = 25 c - 350 520 on-resistance temp-coefficient tc rds - 2800 - ppm/c on/off input low voltage d v il for sip4282axxx, v in 1.5 v to < 1.8 v --0.3 v v in 1.8 v to < 2.7 v --0.4 v in 2.7 v to 5.5 v --0.6 on/off input high voltage d v ih v in 1.5 v to < 2.7 v 1.3 -- v in 2.7 v to < 4.2 v 1.5 - - v in 4.2 v to 5.5 v 1.8 - - on/off input leakage i sink v on/off = 5.5 v --1a output pull-down resistance r pd on/off = inactive, t a = 25 c - 180 250 sip4282axxx2 versions output turn-on delay time t d(on) v in = 5 v, r load = 10 , t a = 25 c -2040 s output turn-on rise time t (on) v in = 5 v, r load = 10 , t a = 25 c - 1100 1500 output turn-off delay time t d(off) v in = 5 v, r load = 10 , t a = 25 c -410 sip4282xxx3 and sip4282axxx3 versions output turn-on delay time t d(on) v in = 5 v, r load = 10 , t a = 25 c -2040 s output turn-on rise time t (on) v in = 5 v, r load = 10 , t a = 25 c - 140 180 output turn-off delay time t d(off) v in = 5 v, r load = 10 , t a = 25 c -410
www.vishay.com 4 document number: 65740 s10-0671-rev. e, 29-mar-10 vishay siliconix sip4282 pin configuration typical characteristics internally regulated, 25 c, unless otherwise noted figure 2 - ppak sc75-6 package i n i n g n d out o n /off out 4 5 6 1 2 3 bottom v ie w figure 3 - tdfn4 1.2 mm x 1.6 mm package 4 3 1 2 bottom v ie w o n /off i n out g n d g n d pin description pin number name function ppak tdfn4 1, 2 3 in this pin is the p-channel mosfet source con nection. bypass to ground through a 1 f capacitor. 3 2 gnd ground connection 4 4 on/off enable input 5, 6 1 out this pin is the p-channel mosfet drain c onnection. bypass to ground through a 0.1 f capacitor. figure 4 - quiescent current vs. input voltage figure 6 - quiescent current vs. temperature 0 1.5 2.0 2.5 3.5 4.5 5.5 3.0 4.0 5.0 0.04 0.02 0.06 0.08 0.10 0.12 v in (v) i q - quiescent current (na) sip4282a 0.001 - 40 - 20 0 40 80 100 20 60 0.1 0.01 1 10 temperature (c) i q - quiescent current (na) sip4282a v in = 5 v v in = 3 v figure 5 - quiescent current vs. input voltage figure 7 - quiescent current vs. temperature 0 1.0 1.5 2.0 3.0 4.0 5.5 2.5 3.5 4.5 5.0 1.0 0.5 1.5 2.0 2.5 3.0 v in (v) i q - quiescent current (a) sip4282 0 - 40 - 20 0 40 80 100 20 60 1.5 0.5 2.5 2.0 1.0 3.0 3.5 temperature (c) i q - quiescent current (a) sip4282 v in = 5 v v in = 3 v
document number: 65740 s10-0671-rev. e, 29-mar-10 www.vishay.com 5 vishay siliconix sip4282 typical characteristics internally regulated, 25 c, unless otherwise noted figure 8 - off switch current vs. input voltage figure 10 - r ds(on) vs. input voltage figure 12 - output pull-down resistance vs. 0 1.5 2.0 2.5 3.5 5.0 6.0 3.0 4.0 5.5 4.5 150 50 250 200 100 300 350 v in (v) i sd(off) - off switch current (na) 50 1.5 2.0 2.5 3.5 5.5 3.0 4.0 4.5 5.0 250 100 450 350 150 550 200 400 300 500 v in (v) r ds - on-resistance (m ) i l = 1.2 a i l = 100 ma i l = 500 ma - 40 - 20 0 40 100 20 60 80 temperature (c) r pd - output pull-down ( ) 150 160 170 180 190 200 210 220 figure 9 - off switch current vs. temperature figure 11 - r ds(on) vs. temperature figure 13 - on/off threshold vs. input voltage 0 - 40 - 20 0 40 100 20 60 80 150 50 250 200 100 300 temperature (c) i sd(off) - off switch current (na) v in = 5 v 60 - 40 - 20 0 40 100 20 60 80 140 80 100 180 120 160 temperature (c) r ds - on-resistance (m ) v in = 5 v v in = 3 v i load = 500 ma 0.4 1.5 2.0 2.5 3.5 6.0 3.0 4.0 5.0 4.5 5.5 1.2 0.6 0.8 1.6 1.0 1.4 v in (v) on/off threshold voltage (v) v ih v il
www.vishay.com 6 document number: 65740 s10-0671-rev. e, 29-mar-10 vishay siliconix sip4282 typical waveforms figure 14 - sip4282axxx2 switching (v in = 3 v) figure 16 - sip4282axxx2 switching (v in = 5 v) figure 18 - sip4282xxx3 and sip4282axxx3 switching (v in = 3 v) figure 15 - sip4282axxx2 turn-off (v in = 3 v) figure 17 - sip4282axxx2 turn-off (v in = 5 v) figure 19 - sip4282xxx3 and sip4282axxx3 turn-off (v in = 3 v)
sip4282 vishay siliconix document number: 65740 s10-0671-rev. e, 29-mar-10 www.vishay.com 7 typical waveforms block diagram pcb layout figure 20 - sip4282xxx3 and sip4282axxx3 switching (v in = 5 figure 21 - sip4282xxx3 and sip4282axxx3 turn-off (v in = 5 v) figure 22 - sip4282 functional block diagram le v el shift under v oltage locko u t sip42 8 2xxx3 only t u rn-on sle w rate control g n d o n /off out i n top bottom figure 23 - tdfn4 1.2 mm x 1.6 mm pcb layout
www.vishay.com 8 document number: 65740 s10-0671-rev. e, 29-mar-10 vishay siliconix sip4282 detailed description the sip4282 is a p-channe l mosfet power switches designed for high-side slew rate controlled load-switching applications. once turned on, the slew-rate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. this is accomplished by first elevating the gate voltage of the mosfet up to its threshold voltage and then by linearly increasing the gate voltage unt il the mosfet becomes fully enhanced. at this point, the gate voltage is then quickly increased to the full input voltage to reduce r ds(on) of the mosfet switch and minimize any associated power losses. the sip4282a-2 version has a modest 1 ms turn on slew rate feature, which significantly reduces in-rush current at turned on time and permits the load switch to be implemented with a small input capacitor, or no input capacitor at all, saving cost and space. all versions features a shutdown output dis- charge circuit which is activated at shutdown (when the part is disabled through the on/off pin) and discharges the output pin through a small internal resistor hence, turning off the load. for sip4282-3, in instances where the input voltage falls below 1.4 v (typically) the under voltage lock-out circuitry protects the mosfet switch from entering the saturation region or operation by shutting down the chip. application information input capacitor while a bypass capacitor on the input is not required, a 1 f or larger capacitor for c in is recommended in almost all applications. the bypass capacitor should be placed as physically close as possible to the sip4282 to be effective in minimizing transients on the input. ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. output capacitor a 0.1 f capacitor or larger across v out and gnd is recommended to insure proper slew operation. c out may be increased without limit to a ccommodate any load transient condition with only minimal affect on the sip4282 turn on slew rate time. there are no esr or capacitor type requirement. enable the on/off pin is compatible with both ttl and cmos logic voltage levels. protection against reve rse voltage condition the p-channel mosfet pass transistor has an intrinsic diode that is reversed bias ed when the input voltage is greater than the output voltage. should v out exceed v in , this intrinsic diode will become forward biased and allow excessive current to flow into the ic thru the v out pin and potentially damage the ic dev ice. therefore extreme care should be taken to prevent v out from exceeding v in . in conditions where v out exceeds v in a schottky diode in parallel with the internal intrinsic diode is recommended to protect the sip4282. thermal considerations the sip4282 is designed to maintain a constant output load current. due to physical limitations of the layout and assembly of the device the ma ximum switch current is 1.2 a, as stated in the absolute ma ximum ratings table. however, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. to obtain the highest power dissipation (and a thermal resistance of 90 c/w) the power pad of the device should be connected to a heat sink on the printed circuit board. the maximum power dissipation in any application is dependant on the maximum junction temperature, t j(max) = 125 c, the junction-to-ambient thermal resistance for the sc-75 ppak package, j-a = 90 c/w, and the ambient temperature, t a , which may be formulaically expressed as: it then follows that, assuming an ambient temperature of 70 c, the maximum power dissipation will be limited to about 610 mw. so long as the load current is below the 1.2 a limit, the maximum continuous switch current beco mes a function two things: the package power dissipation and the r ds(on) at the ambient temperature. as an example let us calculate the worst case maximum load current at t a = 70 c. the worst case r ds(on) at 25 c occurs at an input voltage of 1.8 v and is equal to 480 m . the r ds(on ) at 70 c can be extrapolated from this data using the following formula r ds(on) (at 70 c) = r ds(on) (at 25 c) x (1 + t c x t) where t c is 3300 ppm/c. continuing with the calculation we have r ds(on) (at 70 c) = 480 m x (1 + 0.0033 x (70 c - 25 c)) = 551 m the maximum current limit is then determined by which in case is 1.05 a. under the stated input voltage condition, if the 1.05 a current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65740 . 90 125 (max.) (max.) a a j a j t t t p - = - = - ) ( (max.) (max.) o n ds load r p i <
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
document number: 65734 www.vishay.com revision: 08-feb-10 1 package information vishay siliconix tdfn4 1.2 x 1.6 case outline dim. millimeters inches min. nom. max. min. nom. max. a 0.50 0.55 0.60 0.020 0.022 0.024 a1 0.00 - 0.05 0.00 - 0.002 a3 0.15 ref 0.006 b 0.20 0.25 0.30 0.008 0.010 0.012 d 1.15 1.20 1.25 0.045 0.047 0.049 d2 0.81 0.86 0.91 0.032 0.034 0.036 e 0.50 bsc 0.020 e 1.55 1.60 1.65 0.061 0.063 0.065 e2 0.45 0.50 0.55 0.018 0.020 0.022 k 0.20 - - 0.008 - - l 0.30 0.35 0.40 0.012 0.014 0.016 ecn: c10-0043-rev. a, 08-feb-10 dwg: 5995 top view bottom view s ide view pin #1 id (optional) index area (d/2 x e/2) 21 4 3 3 4 12 d e a a1 b e l a3 e2 d2 k
vishay siliconix package information document number: 73850 22-may-06 www.vishay.com 1 dim millimeters inches min nom max min nom max a 0.70 0.75 0.80 0.028 0.030 0.032 a1 0 - 0.05 0 - 0.002 b 0.20 0.25 0.30 0.008 0.010 0.012 c 0.15 0.20 0.25 0.006 0.008 0.010 d 1.55 1.60 1.65 0.0061 0.063 0.065 d1 0.95 1.00 1.05 0.037 0.039 0.041 e 1.55 1.60 1.65 0.061 0.063 0.065 e1 0.55 0.60 0.65 0.022 0.024 0.026 e 0.50 bsc 0.020 bsc e1 1.00 bsc 0.039 bsc k 0.15 - - 0.006 - - k2 0.20 - - 0.008 l 0.20 0.25 0.30 0.008 0.010 0.012 ecn: s-60845-rev. b, 22-may-06 dwg: 5953 powerpak sc75-6l (power ic only) ? top v ie w pin 1 dot by marking ppaksc75 (1.6 x 1.6 mm) k2 k2 bottom v ie w e1 side v ie w a a1 c d e e b d1 exposed pad e1 exposed pad k k pin3 pin 2 pin1 l pin4 pin 5 pin6
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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